Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator

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Contact properties of a low-resistance aluminum-based electrode with metal capping layers in vertical oxide thin-film transistors - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/D3TC02880A

Temperature dependence of the vertical current in the MIOS structure.

Electron-Transport Characteristics through Aluminum Oxide (100) and (012) in a Metal-Insulator-Metal Junction System: Density Functional Theory-Nonequilibrium Green Function Approach. - Abstract - Europe PMC

Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator

Residual oxygen driven defect mediated room temperature magnetism in dilute nitrogen incorporated amorphous Al-N-O alloy thin film - ScienceDirect

a) XPS results for TiON film prepared via a single-step sputtering

Role of defects on the transparent conducting properties of binary metal oxide thin film electrodes - ScienceDirect

PDF) Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator

Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory. - Abstract - Europe PMC

Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors

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